P60NS04Z datasheet(1/8 Pages) STMICROELECTRONICS

부품명	P60NS04Z

상세설명	N - CHANNEL CLAMPED 10mohm - 60A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET

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제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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STP60NS04Z

N - CHANNEL CLAMPED 10m

Ω - 60A - TO-220

FULLY PROTECTED MESH OVERLAY

™ MOSFET

PRELIMINARY DATA

s

TYPICAL RDS(on) = 0.010

Ω

s

100% AVALANCHE TESTED

s

LOW CAPACITANCE AND GATE CHARGE

s

175

oC MAXIMUM JUNCTION

TEMPERATURE

DESCRIPTION

This fully clamped Mosfet is produced by using

the latest advanced Company’s Mesh Overlay

process which is based on a novel strip layout.

The inherent benefits of the new technology

coupled with the extra clamping capabilities make

this product particularly suitable for the harshest

operation conditions such as those encountered

in

the

automotive environment.

Any

other

application requiring extra ruggedness is also

recommended.

APPLICATIONS

s

ABS, SOLENOID DRIVERS

s

MOTOR CONTROL

s

DC-DC CONVERTERS

®

INTERNAL SCHEMATIC DIAGRAM

December 1999

1

2

3

TO-220

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

VDS

Drain-source Voltage (VGS = 0)

CLAMPED

V

VDG

Drain- gate Voltage

CLAMPED

V

VGS

G ate-source Volt age

CLAMPED

V

ID

Drain Current (continuous) at Tc =25

oC60

A

ID

Drain Current (continuous) at Tc = 100

oC42

A

IDG

Drain Gate Current (continuous)

± 50

mA

IGS

G ate Source Current (cont inuous)

± 50

mA

IDM (

•)

Drain Current (pulsed)

240

A

Ptot

T otal Dissipation at Tc =25

oC

140

W

Derating Factor

0.93

W /

o C

VESD (G-S) Gate-Source ESD (HBM - C= 100pF, R=1.5 k

Ω)2

kV

VESD(G-D) G ate-Drain ESD (HBM - C= 100pF, R=1.5 k

Ω)4

kV

VESD(D-S) Drain-Source ESD (HBM - C= 100pF, R=1.5 k

Ω)4

kV

Tstg

Storage Temperature

-65 to 175

o C

Tj

Max. Operating Junction Temperature

-40 to 175

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤60 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

STP60NS04Z

CLAMPED

<0.015

Ω

60 A

1/8

유사한 부품 번호 - P60NS04Z

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	P60NS04ZB	256Kb / 13P	N-channel clamped - 10mohm - 60A - TO-220 Fully protected Mesh Overlay Power MOSFET 04-Oct-2006

More results

유사한 설명 - P60NS04Z

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	STP22NS25Z	449Kb / 10P	N-CHANNEL 250V - 0.13ohm - 22A TO-220/D2PAK Zener-Protected MESH OVERLAY™ MOSFET Jan-2002
	STP60NS04ZB	292Kb / 8P	N-CHANNEL CLAMPED 10mohm - 60A TO-220 FULLY PROTECTED MESH OVERLAY™ MOSFET Nov-2002
	STP80NS04Z	90Kb / 8P	N - CHANNEL CLAMPED 7.5mohm - 80A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET Dec-1999
	STP62NS04Z	249Kb / 8P	N-CHANNEL CLAMPED 12.5m - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET Mar-2004
	STW130NS04ZB	327Kb / 12P	N-CHANNEL CLAMPED - 7 mohm - 80A TO-220/D2PAK/TO-247 FULLY PROTECTED MESH OVERLAY MOSFET 14-Jan-2005
	STP62NS04Z	267Kb / 12P	N-channel clamped 12.5mOHM - 62A - TO-220 Fully protected MESH OVERLAY Power MOSFET 02-Oct-2006
	STW130NS04ZB	382Kb / 16P	N-channel clamped - 7 mOHM - 80A TO-220/I2/D2PAK/TO-247 Fully protected mesh overlay TM MOSFET 03-Oct-2006
	STP60NS04ZB	256Kb / 13P	N-channel clamped - 10mohm - 60A - TO-220 Fully protected Mesh Overlay Power MOSFET 04-Oct-2006
	STP75NS04Z	231Kb / 12P	N-channel Clamped - 7mohm - 80A - TO-220 Fully protected MESH Overlay III Power MOSFET 06-Jun-2006
	STP80NS04ZB	115Kb / 6P	N-CHANNEL CLAMPED 7.5mohm - 80A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET May-2003

More results

P60NS04Z 데이터시트(PDF) 1 Page - STMicroelectronics

P60NS04Z 데이터시트(HTML) 1 Page - STMicroelectronics

유사한 부품 번호 - P60NS04Z

유사한 설명 - P60NS04Z

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