| 전자부품 데이터시트 검색엔진 |
|
P60NS04Z 데이터시트(PDF) 3 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
P60NS04Z 데이터시트(HTML) 3 Page - STMicroelectronics |
|
3 / 8 page ![]() ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Parameter Test Con ditions Min. Typ. Max. Unit Qg Q gs Qgd Tot al G ate Charge Gat e-Source Charge Gat e-Drain Charge VDD =16 V ID =60 A VGS =10 V 70 20 22 100 nC nC nC SWITCHING OFF Symbo l Parameter Test Con ditions Min. Typ. Max. Unit tr(Voff) tf tc Off -volt age Rise T ime Fall T ime Cross-over Time VCLAMP =30 V ID =60 A RG =4.7 Ω VGS =10 V (see t est circuit, f igure 5) 25 110 150 35 150 200 ns ns ns SOURCE DRAIN DIODE Symbo l Parameter Test Con ditions Min. Typ. Max. Unit ISD ISDM ( •) Source-drain Current Source-drain Current (pulsed) 60 240 A A VSD ( ∗)Forward On Voltage ISD =60 A VGS =0 1. 5 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 60 A di/ dt = 100 A/ µs Vr =25 V Tj = 150 oC (see t est circuit, f igure 5) 65 0.15 4.5 ns µC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance STP60NS04Z 3/8 |
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |