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ST6200C 데이터시트(PDF) 72 Page - STMicroelectronics |
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ST6200C 데이터시트(HTML) 72 Page - STMicroelectronics |
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72 / 100 page ![]() ST6200C/ST6201C/ST6203C 72/100 11.6 MEMORY CHARACTERISTICS Subject to general operating conditions for VDD, fOSC, and TA unless otherwise specified. 11.6.1 RAM and Hardware Registers 11.6.2 EPROM Program Memory Figure 49. EPROM Retention Time vs. Temperature Notes: 1. Minimum VDD supply voltage without losing data stored in RAM (in STOP mode or under RESET) or in hardware reg- isters (only in STOP mode). Guaranteed by construction, not tested in production. 2. Data based on reliability test results and monitored in production. For OTP devices, data retention and programmability must be guaranteed by a screening procedure. Refer to Application Note AN886. 3. The data retention time increases when the TA decreases, see Figure 49. Symbol Parameter Conditions Min Typ Max Unit VRM Data retention1) 0.7 V Symbol Parameter Conditions Min Typ Max Unit tret Data retention 2) TA=+55°C 3) 10 years -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 Temperature [°C] 0.1 1 10 100 1000 10000 100000 Retention time [Years] 1 |
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