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BU900TP 데이터시트(PDF) 3 Page - STMicroelectronics |
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BU900TP 데이터시트(HTML) 3 Page - STMicroelectronics |
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3 / 8 page ![]() BU900TP Electrical characteristics 3/8 2 Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 4. Electrical characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit IEBO Emitter cut-off current (IC = 0) VEB = 8 V 100 µA ICES Collector cut-off current (VBE = 0) VCE = 370 V 100 µA V(BR)CES Collector-emitter breakdown voltage (VBE = 0) IC = 50 mA 370 660 V VCE(sat) (1) 1. Pulsed duration = 300 ms, duty cycle ≤1.5% Collector-emitter saturation voltage IC = 2.5 A _ IB = 1 mA IC = 3 A _ _ IB = 3 mA 4 4 V V VBE(sat) (1) Base-emitter saturation voltage IC = 3 A _ IB = 3 mA 3.5 V hFE DC current gain IC = 1 A _ VCE = 5 V 7000 VF Diode forward voltage IC = 5 A 18 V Es/b (1) Secondary breakdown energy IC = 4 A L = 10 mH 80 mJ |
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