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2STW1695 데이터시트(PDF) 3 Page - STMicroelectronics |
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2STW1695 데이터시트(HTML) 3 Page - STMicroelectronics |
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3 / 9 page ![]() 2STW1695 Electrical characteristics 3/9 2 Electrical characteristics (Tcase = 25 °C; unless otherwise specified) Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB = -140 V -0.1 µA IEBO Emitter cut-off current (IC = 0) VEB = -6 V -0.1 µA V(BR)CEO Collector-emitter breakdown voltage (IB = 0) IC = -50 mA -140 V V(BR)CBO Collector-base breakdown voltage (IE = 0) IC = -100 µA -140 V V(BR)EBO (1) 1. Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 % Emitter-base breakdown voltage (IC = 0) IE = -1 mA -6 V VCE(sat) (1) Collector-emitter saturation voltage IC = -5 A IB = -500 mA IC = -7 A IB = -700 mA -0.5 -0.7 V V VBE (1) Base-emitter voltage VCE = -5 V IC = -5 A -1.3 V hFE DC current gain IC = -3 A VCE = -4 V IC = -5 A VCE = -4 V 70 50 140 fT Transition frequency IC = -0.5 A VCE = -12 V 20 MHz CCBO Collector-base capacitance (IE = 0) VCB = -10 V f = 1 MHz 225 pF ton tstg tf Resistive load Turn-on time Storage time Fall time IC = -5 A VCC = -60 V IB1 = -IB2 = -0.5 A 0.24 1.2 0.24 µs µs µs |
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