STPS4045CP datasheet(2/5 Pages) STMICROELECTRONICS

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Symbol

Parameter

Value

Unit

Rth (j-c)

Junction to case

Per diode

total

1.5

0.8

°C/W

Rth (c)

Coupling

0.1

THERMAL RESISTANCES

When the diodes 1 and 2 are used simultaneously :

∆ TJ(diode 1) = P(diode1)x Rth(j-c) (Per diode) + P(diode 2) x Rth(c)

Symbol

Parameter

Tests Conditions

Min.

Typ.

Max.

Unit

IR *

Reverse leakage

current

Tj = 25

°CVR =VRRM

200

µA

Tj = 125

°C

VF *

Forward voltage drop

Tj = 125

°CIF =20 A

0.56

0.63

Tj = 25

°CIF =40 A

0.94

Tj = 125

°CIF =40 A

0.7

0.83

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Pulse test : * tp = 380

µs, δ <2%

To evaluate the conduction losses use the following equation :

P = 0.46 x IF(AV) + 0.0085 IF

(RMS)

2468

10 12 14 16 18 20 22 24 26

IF(av) (A)

PF(av)(W)

δ=tp/T

δ =1

δ = 0.5

δ = 0.2

δ = 0.1

δ = 0.05

Fig. 1: Average forward power dissipation

versus average forward current (per diode).

100

125

150

175

Tamb(

°C)

IF(av)(A)

Rth(j-a)=15

°C/W

Rth(j-a)=Rth(j-c)

δ=tp/T

Fig. 2: Average current

versus

ambient

temperature (per diode).

STPS4045CP/CW

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