STPS4045CP datasheet(3/5 Pages) STMICROELECTRONICS

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1E-3

1E-2

1E-1

1E+0

100

120

140

160

180

200

t(s)

IM(A)

Tc=75

°C

Tc=100

°C

Tc=125

°C

δ=0.5

Fig. 3: Nonrepetitivesurgepeakforwardcurrentversus

overloadduration(maximum values)(per diode).

1E-4

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-c)/Rth(j-c)

δ=tp/T

Single pulse

δ = 0.1

δ = 0.2

δ = 0.5

Fig. 4: Relative variation of thermal transient

impedancejunction to case versus pulse duration.

1E+0

1E+1

1E+2

1E+3

1E+4

5E+4

VR(V)

IR(

µA)

Tj=150

°C

Tj=100

°C

Tj=125

°C

Tj=75

°C

Tj=50

°C

Tj=25

°C

Fig. 5: Reverse leakage current versus reverse

voltage applied (typical values) (per diode).

0.1

1.0

5.0

VR(V)

C(nF)

Fig. 6: Junction capacitance versus reverse

voltage applied (typical values) (per diode).

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

100

200

VFM(V)

IFM(A)

Typical values

Tj=125

°C

Tj=125

°C

Tj=25

°C

Fig. 7: Forward voltage drop versus forward

current (maximum values) (per diode).

STPS4045CP/CW

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