38D2 datasheet(3/136 Pages) RENESAS

3 / 136 page

Rev.3.02

Apr 10, 2008

Page 3 of 131

REJ03B0177-0302

38D2 Group

NOTE:

1. 12.5 MHz < f(XIN)

≤ 16 MHz is not available in the frequency/2 mode.

Table 1

Performance overview

Parameter

Function

Number of basic instructions

Instruction execution time

0.32

μs (Minimum instruction, Oscillation frequency 12.5 MHz)

Oscillation frequency

16 MHz (Maximum)(1)

Memory sizes

(QzROM version)

ROM

16 K to 60 K bytes

RAM

640 to 2048 bytes

Memory sizes

(Flash memory version)

ROM

60 K bytes

RAM

2048 bytes

I/O port

P0-P5, P60-P62

8-bit

× 6, 3-bit × 1 (24 pins sharing SEG)

Interrupt

18 sources, 16 vectors (includes key input interrupt)

Timer

8-bit

× 4, 16-bit × 2

Serial Interface

8-bit

× 2 (UART or Clock-synchronized)

PWM

10-bit

× 2, 16-bit × 1 (common to IGBT output)

A/D converter

10-bit

× 8 (operated in low-speed mode)

Watchdog timer

8-bit

× 1

ROM correction function

32 bytes

× 2 vectors

LED direct drive port

8 (average current: 15 mA, peak current: 30 mA, total current: 90 mA)

LCD drive control

circuit

Bias

1/2, 1/3

Duty

2, 3, 4

Common output

Segment output

Main clock generating circuits

Built-in (connect to external ceramic resonator or on-chip oscillator)

Sub-clock generating circuits

Built-in (connect to external quartz-crystal oscillator)

Power source voltage

(QzROM version)

In frequency/2 mode

(1)

f(XIN)

≤ 12.5 MHz 4.5 to 5.5 V

f(XIN)

≤ 8 MHz

4.0 to 5.5 V

f(XIN)

≤ 4 MHz

2.0 to 5.5 V

f(XIN)

≤ 2 MHz

1.8 to 5.5 V

In frequency/4 mode

f(XIN)

≤ 16 MHz

4.5 to 5.5 V

f(XIN)

≤ 8 MHz

2.0 to 5.5 V

f(XIN)

≤ 4 MHz

1.8 to 5.5 V

In frequency/8 mode

f(XIN)

≤ 16 MHz

4.5 to 5.5 V

f(XIN)

≤ 8 MHz

2.0 to 5.5 V

f(XIN)

≤ 4 MHz

1.8 to 5.5 V

In low-speed mode

1.8 to 5.5 V

Power source voltage

(Flash memory version)

In frequency/2 mode

(1)

f(XIN)

≤ 12.5 MHz 4.5 to 5.5 V

f(XIN)

≤ 8 MHz

4.0 to 5.5 V

f(XIN)

≤ 4 MHz

2.7 to 5.5 V

In frequency/4 mode

f(XIN)

≤ 16 MHz

4.5 to 5.5 V

f(XIN)

≤ 8 MHz

2.7 to 5.5 V

In frequency/8 mode

f(XIN)

≤ 16 MHz

4.5 to 5.5 V

f(XIN)

≤ 8 MHz

2.7 to 5.5 V

In low-speed mode

2.7 to 5.5 V

Power dissipation

(QzROM version)

In frequency/2 mode

Std. 32 mW (Vcc = 5 V, f(XIN) = 12.5 MHz, Ta = 25

°C)

In low-speed mode

Std. 18

μW (Vcc = 2.5 V, f(XIN) = stop, f(XCIN) = 32 kHz, Ta = 25°C)

Power dissipation

(Flash memory version)

In frequency/2 mode

Std. 20 mW (Vcc = 5 V, f(XIN) = 12.5 MHz, Ta = 25

°C)

In low-speed mode

Std. 1.1 mW (Vcc = 2.7 V, f(XIN) = stop, f(XCIN) = 32 kHz, Ta = 25

°C)

Input/Output

characteristics

Input/Output withstand voltage

VCC

Output current

10 mA

Operating temperature range

-20 to 85

°C

Device structure

CMOS silicon gate

Package

64-pin plastic molded LQFP

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