REJ03G1657-0301 Rev.3.01 Apr 24, 2008

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RJK0366DSP

Silicon N Channel Power MOS FET

Power Switching

REJ03G1657-0301

Rev.3.01

Apr 24, 2008

Features

• Capable of 4.5 V gate drive

• Low drive current

• High density mounting

• Low on-resistance

• Pb-free

Outline

RENESAS Package code: PRSP0008DD-D

(Package name: SOP-8<FP-8DAV>)

1, 2, 3

Source

4

Gate

5, 6, 7, 8 Drain

G

D

SS S

D DD

4

1 23

56 7 8

1 2

3 4

5

6

7

8

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

30

V

Gate to source voltage

±20

V

Drain current

11

A

Drain peak current

Note1

88

A

Body-drain diode reverse drain current

11

A

Avalanche current

Note 2

11

A

Avalanche energy

Note 2

12.1

mJ

Channel dissipation

Pch

Note3

2.0

W

Channel to ambient thermal impedance

62.5

°C/W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

≤ 10 µs, duty cycle ≤ 1%

2. Value at Tch = 25

°C, Rg ≥ 50 Ω

3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW

≤ 10s