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RJK0366DSP 데이터시트(PDF) 3 Page - Renesas Technology Corp |
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RJK0366DSP 데이터시트(HTML) 3 Page - Renesas Technology Corp |
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3 / 7 page ![]() RJK0366DSP REJ03G1657-0301 Rev.3.01 Apr 24, 2008 Page 3 of 6 Main Characteristics Drain to Source Voltage VDS (V) Typical Output Characteristics Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Gate to Source Voltage VGS (V) Typical Transfer Characteristics Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current 20 16 12 8 4 0 2 468 10 20 16 12 8 4 0 12 3 4 5 Tc = 75 °C 25 °C –25 °C VDS = 10 V Pulse Test VGS = 2.6 V Pulse Test 10 3 1 30 300 1 10 100 1000 3 200 150 100 50 0 4 8 12 16 20 Pulse Test ID = 10 A 5 A 100 30 VGS = 4.5 V 10 V 2.8 V 3.0 V 10 V 3.2 V 4.5 V Pulse Test 2 A Ambient Temperature Ta (°C) Power vs. Temperature Derating 4.0 3.0 2.0 1.0 0 50 100 150 200 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW ≤ 10 s Drain to Source Voltage VDS (V) Maximum Safe Operation Area Note 5 : When using the glass epoxy board (FR4 40x40x1.6 mm) 100 10 1 0.1 0.01 0.1 0.3 1 3 10 30 100 500 Ta = 25 °C 1 shot Pulse PW = 10 ms 10 µs 100 µs Operation in this area is limited by R DS(on) Note 5 DC Operation (PW ≤ 10 s) 1 ms |
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