M16CSLASH29 datasheet(354/499 Pages) RENESAS

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20. Flash Memory Version

page 330

20. Flash Memory Version

20.1 Flash Memory Performance

In the flash memory version, rewrite operation to the flash memory can be performed in four modes: CPU

rewrite mode, standard serial I/O mode, parallel I/O mode, and CAN I/O mode.

Table 20.1

lists specifications of the flash memory version. (Refer to Table 1.1 or Table 1.2 for the items

not listed in Table 20.1.

Item

Flash memory operating mode

Erase block

Program method

Erase method

Program, erase control method

Protect method

Number of commands

Program/Erase

Endurance(1)

ROM code protection

Specification

4 modes (CPU rewrite, standard serial I/O, parallel I/O, CAN I/O)(3)

See Figures 20.1 to 20.3 Flash Memory Block Diagram

In units of word

Block erase

Program and erase controlled by software command

Blocks 0 to 5 are write protected by FMR16 bit.

In addition, the block 0 and block 1 are write protected by FMR02 bit

5 commands

100 times

1,000 times (See Tables 1.6 to 1.8)

100 times 10,000 times (See Tables 1.6 to 1.8)

Parallel I/O, standard serial I/O, and CAN I/O modes are supported.

Data Retention

20 years (Topr = 55ϒC)

Block 0 to 5 (program area)

Block A and B (data are) (2)

NOTES:

1. Program and erase endurance definition

Program and erase endurance are the erase endurance of each block. If the program and erase endurance are n

times (n=100,1000,10000), each block can be erased n times. For example, if a 2-Kbyte block A is erased after

writing 1 word data 1024 times, each to different addresses, this is counted as one program and erasure.

However, data cannot be written to the same address more than once without erasing the block. (Rewrite

disabled)

2. To use the limited number of erasure efficiently, write to unused address within the block instead of rewrite. Erase

block only after all possible address are used. For example, an 8-word program can be written 128 times before

erase is necessary. Maintaining an equal number of erasure between Block A and B will also improve efficiency.

We recommend keeping track of the number of times erasure is used.

3. The M16C/29 Group, T-ver./V-ver. does not support the CAN I/O mode.

Table 20.1 Flash Memory Version Specifications

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