| 전자부품 데이터시트 검색엔진 |
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H8S2245 데이터시트(PDF) 581 Page - Renesas Technology Corp |
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H8S2245 데이터시트(HTML) 581 Page - Renesas Technology Corp |
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581 / 818 page ![]() Section 16 ROM Rev.3.00 Mar. 26, 2007 Page 539 of 772 REJ09B0355-0300 Table 16.7 AC Characteristics in PROM Mode (Preliminary) When V CC = 6.0 V ±0.25 V, VPP = 12.5 V ±0.3 V, Ta = 25°C ±5°C Item Symbol Min Typ Max Unit Test Conditions Address setup time t AS 2 —— µs Figure 16.5* 1 OE setup time t OES 2 —— µs Data setup time t DS 2 —— µs Address hold time t AH 0 —— µs Data hold time t DH 2 —— µs Data output disable time t DF* 2 —— 130 ns V PP setup time t VPS 2 —— µs Programming pulse width t PW 0.19 0.20 0.21 ms PGM pulse width for overwrite programming t OPW* 3 0.19 — 5.25 ms V CC setup time t VCS 2 —— µs CE setup time t CES 2 —— µs Data output delay time t OE 0 — 150 ns Notes: 1. Input pulse level: 0.8 V to 2.2 V Input rise time and fall time ≤ 20 ns Timing reference levels; Input: 1.0 V, 2.0 V; Output: 0.8 V, 2.0 V 2. t DF is defined to be when output has reached the open state, and the output level can no longer be referenced. 3. t OPW is defined by the value shown in the flowchart. |
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