H8S2245 datasheet(578/818 Pages) RENESAS

578 / 818 page

Section 16 ROM

Rev.3.00 Mar. 26, 2007 Page 536 of 772

REJ09B0355-0300

16.5

Programming

16.5.1

Overview

Table 16.5 shows how to select the program, verify, and program-inhibit modes in PROM mode.

Table 16.5

Mode Selection in PROM Mode

Pins

Mode

PGM

PGM V

7 to EO0

16 to EA0

Program

Data input

Address input

Verify

LLH

Data output

Address input

Program-inhibit

LLLV

High impedance

Address input

HHH

Legend:

Low voltage level

High voltage level

PP: VPP voltage level

CC: VCC voltage level

Programming and verification should be carried out using the same specifications as for the

standard HN27C101 EPROM.

However, do not set the PROM programmer to page mode does not support page programming. A

PROM programmer that only supports page programming cannot be used. When choosing a

PROM programmer, check that it supports high-speed programming in byte units. Always set

addresses within the range H'00000 to H'1FFFF.

16.5.2

Programming and Verification

An efficient, high-speed programming procedure can be used to program and verify PROM data.

This procedure writes data quickly without subjecting the chip to voltage stress or sacrificing data

reliability. It leaves the data H'FF in unused addresses. Figure 16.4 shows the basic high-speed

programming flowchart. Tables 16.6 and 16.7 list the electrical characteristics of the chip during

programming. Figure 16.5 shows a timing chart.

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