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HD64F2149YV 데이터시트(PDF) 751 Page - Renesas Technology Corp |
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HD64F2149YV 데이터시트(HTML) 751 Page - Renesas Technology Corp |
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751 / 1075 page ![]() Section 22 ROM Rev. 3.00 Jan 18, 2006 page 723 of 1044 REJ09B0280-0300 Table 22.14 AC Characteristics in Memory Read Mode Conditions: V CC = 3.3 V ±0.3 V, VSS = 0 V, Ta = 25°C ±5°C Item Symbol Min Max Unit Command write cycle t nxtc 20 — µs CE hold time t ceh 0 — ns CE setup time t ces 0 — ns Data hold time t dh 50 — ns Data setup time t ds 50 — ns Write pulse width t wep 70 — ns WE rise time t r — 30 ns WE fall time t f — 30 ns CE FA17 to FA0 FO7 to FO0 Data OE WE Command write twep tceh tdh tds tf tr tnxtc Note: Data is latched on the rising edge of WE. tces Memory read mode Address stable Data Figure 22.16 Memory Read Mode Timing Waveforms after Command Write |
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