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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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HD64F2149YV 데이터시트(PDF) 756 Page - Renesas Technology Corp |
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HD64F2149YV 데이터시트(HTML) 756 Page - Renesas Technology Corp |
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756 / 1075 page  Section 22 ROM Rev. 3.00 Jan 18, 2006 page 728 of 1044 REJ09B0280-0300 22.10.6 Auto-Erase Mode AC Characteristics Table 22.18 AC Characteristics in Auto-Erase Mode Conditions: V CC = 3.3 V ±0.3 V, VSS = 0 V, Ta = 25°C ±5°C Item Symbol Min Max Unit Command write cycle t nxtc 20 — µs CE hold time t ceh 0 — ns CE setup time t ces 0 — ns Data hold time t dh 50 — ns Data setup time t ds 50 — ns Write pulse width t wep 70 — ns Status polling start time t ests 1 — ms Status polling access time t spa — 150 ns Memory erase time t erase 100 40000 ms WE rise time t r — 30 ns WE fall time t f — 30 ns CE FA17 to FA0 FO7 to FO0 FO6 FO7 OE WE tests tnxtc tnxtc tces tceh tdh CLin DLin twep FO0 to FO5 = 0 H'20 H'20 Erase normal end confirmation signal tf tr tds tspa terase (100 to 40000 ms) Erase end identification signal Figure 22.21 Auto-Erase Mode Timing Waveforms |
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