H8SXSLASH1663 datasheet(978/1158 Pages) RENESAS

978 / 1158 page

Section 21 Flash Memory (0.18-

µm F-ZTAT Version)

Rev.1.00 Jun. 07, 2006 Page 926 of 1102

REJ09B0294-0100

Error protection is canceled by a reset. Note that the reset should be released after the reset input

period of at least 100

µs has passed. Since high voltages are applied during programming/erasing

of the flash memory, some voltage may remain after the error protection state has been entered.

For this reason, it is necessary to reduce the risk of damaging the flash memory by extending the

reset input period so that the charge is released.

The state-transition diagram in figure 21.16 shows transitions to and from the error protection

state.

Reset

(hardware protection)

Programming/erasing

mode

Error-protection mode

(software standby)

Read disabled

Programming/erasing enabled

FLER = 0

Read disabled

Programming/erasing disabled

FLER = 0

Read enabled

Programming/erasing disabled

FLER = 1

Read disabled

Programming/erasing disabled

FLER = 1

RES = 0

Error occurrence

Error

occ

urred

(Software

stand

by)

RES

= 0

Software standby mode

Cancel

software standby mode

RES = 0

Programming/erasing interface

Figure 21.16 Transitions to Error Protection State

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