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H8SX/1663R 데이터시트(PDF) 1421 Page - Renesas Technology Corp |
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H8SX/1663R 데이터시트(HTML) 1421 Page - Renesas Technology Corp |
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1421 / 1504 page ![]() Section 30 Electrical Characteristics Rev. 2.00 Sep. 24, 2008 Page 1389 of 1468 REJ09B0412-0200 Tp B φ A23 to A0 RAS LUCAS, LLCAS BS OE, RD WE D15 to D0 OE, RD WE D15 to D0 AS Tr Tc1 tCPW1 tAC3 tRCH tRCS1 Tc2 Tc1 Tc2 Read Write tDACD1 tDACD2 Note: Timming of DACK when DDS = 0 and EDDS = 0 Timming of RAS when RAST = 0 RD/ WR RD/ WR (DKC = 0) DACK3 to DACK0 (DKC = 1) DACK3 to DACK0 tDACD2 Figure 30.21 DRAM Access Timing: Two-State Burst Access |
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