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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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H8SX/1663M 데이터시트(PDF) 314 Page - Renesas Technology Corp |
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H8SX/1663M 데이터시트(HTML) 314 Page - Renesas Technology Corp |
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314 / 1504 page  Section 9 Bus Controller (BSC) Rev. 2.00 Sep. 24, 2008 Page 282 of 1468 REJ09B0412-0200 9.10.5 Basic Timing Figure 9.38 shows a basic access timing of the DRAM space. A basic bus cycle consists of four clock cycles: one precharge cycle (Tp), one row address output cycle (Tr), and two column address output cycles (Tc1 and Tc2). The RD signal is output to DRAM as an OE signal on a DRAM access. When DRAM with the EDO page mode function is in use, connect the OE signal to the OE pin of the DRAM. T p T r T c1 T c2 Address bus Row address Column address B φ RAS LUCAS LLCAS WE OE (RD) WE OE (RD) Data bus High High Read Write Data bus BS RD/ WR Figure 9.38 DRAM Basic Access Timing (RAS = 0 and CAST = 0) |
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