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THBT20011D 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 THBT20011D
상세설명  TRIPOLAR OVERVOLTAGE PROTECTION FOR TELECOM LINE
PDF  9 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

THBT20011D 데이터시트(HTML) 3 Page - STMicroelectronics

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THBTxxx11D
3/9
V
I
I
H
IBO
V
RM VBR
BO
V
PP
I
R
I
Symbol
Parameter
VRM
Stand-off voltage
IRM
Leakage current at stand-off voltage
VR
Continuous Reverse voltage
VBR
Breakdown voltage
VBO
Breakover voltage
IH
Holding current
IBO
Breakover current
VF
Forward voltage drop
IPP
Peak pulse current
C
Capacitance
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
Type
IRM @VRM
IR @VR
VBO @IBO
IH
C
max.
max.
note 1
max.
note 2
min.
max.
min
note 3
max
note 4
µAV
µA
V
V
mAmAmA
pF
THBT15011D
5
135
50
150
210
50
400
150
80
THBT16011D
5
135
50
160
230
50
400
150
80
THBT20011D
5
180
50
200
290
50
400
150
80
THBT27011D
5
240
50
270
380
50
400
150
80
Note 1:
IR mesuared at VR guarantees VBR >VR
Note 2:
Measured at 50 Hz (1 cycle) test circuit 1.
Note 3:
See the reference test circuit 2.
Note 4:
VR = 1V, F = 1MHz.
STATIC PARAMETERS
Type
Symbol
Test conditions (see note 5)
Maximum
Unit
THBT15011D
VBO
10/700
µs 1.5kV
Rp=10
Ω
IPP=30A
1.2/50
µs
1.5kV
Rp=10
Ω
IPP=30A
2/10
µs
2.5kV
Rp=62
Ω
IPP=38A
190
190
200
V
THBT16011D
VBO
10/700µs
1.5kV
Rp=10
Ω
IPP=30A
1.2/50
µs
1.5kV
Rp=10
Ω
IPP=30A
2/10
µs
2.5kV
Rp=62
Ω
IPP=38A
200
200
210
V
THBT20011D
VBO
10/700µs
1.5kV
Rp=10
Ω
IPP=30A
1.2/50
µs
1.5kV
Rp=10
Ω
IPP=30A
2/10
µs
2.5kV
Rp=62
Ω
IPP=38A
270
270
280
V
THBT27011D
VBO
10/700µs
1.5kV
Rp=10
Ω
IPP=30A
1.2/50
µs
1.5kV
Rp=10
Ω
IPP=30A
2/10
µs
2.5kV
Rp=62
Ω
IPP=38A
360
360
400
V
Note 5 :
See test circuit 3 for VBO dynamic parameters; Rp is the protection resistor located on the line card.
DYNAMIC BREAKOVER VOLTAGES (Transversal mode)



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