| 전자부품 데이터시트 검색엔진 |
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THBT20011D 데이터시트(PDF) 6 Page - STMicroelectronics |
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THBT20011D 데이터시트(HTML) 6 Page - STMicroelectronics |
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6 / 9 page ![]() THBTxxx11D 6/9 APPLICATION NOTE 1 2 4 3 8 7 5 6 TIP GND RING TIP GND RING 1 Connect pins 2, 3, 6 and 7 to Ground in order to guarantee a good surge current capability for long duration disturbances. 2 In order to take advantage of the" 4-point “ structure of the THBT, the TIP and RING lines have to cross the device. In this case, the device will eliminate the overvoltages generated by the parasitic inductances of the wiring (Ldi/dt), especially for very fast transients. 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 0 1 2 3 4 5 6 7 8 9 10 I (A) TSM F=50Hz Tj initial=25°C t(s) Fig. 1: Surge peak current versus overload dura- tion. |
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