| 전자부품 데이터시트 검색엔진 |
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TS616IDWT 데이터시트(PDF) 4 Page - STMicroelectronics |
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TS616IDWT 데이터시트(HTML) 4 Page - STMicroelectronics |
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4 / 27 page ![]() TS616 4/27 NOISE AND DISTORTION eN Equivalent Input Noise Voltage F = 100kHz 2.5 nV/ √Hz iNp Equivalent Input Noise Current (+) F = 100kHz 15 pA/ √Hz iNn Equivalent Input Noise Current (-) F = 100kHz 21 pA/ √Hz HD2 2nd Harmonic Distortion (differential configuration) Vout = 14Vp-p, AV = 12dB F= 110kHz, RL = 50Ω diff. -87 dBc HD3 3rd Harmonic Distortion (differential configuration) Vout = 14Vp-p, AV = 12dB F= 110kHz, RL = 50Ω diff. -83 dBc IM2 2nd Order Intermodulation Product (differential configuration) F1= 100kHz, F2 = 110kHz Vout = 16Vp-p, AV = 12dB RL = 50Ω diff. -76 dBc F1= 370kHz, F2 = 400kHz Vout = 16Vp-p, AV = 12dB RL = 50Ω diff. -75 IM3 3rd Order Intermodulation Product (differential configuration) F1 = 100kHz, F2 = 110kHz Vout = 16Vp-p, AV = 12dB RL = 50Ω diff. -88 dBc F1 = 370kHz, F2 = 400kHz Vout = 16Vp-p, AV = 12dB RL = 50Ω diff. -87 Note: As described on page 24 (table 71), the TS616 requires a 620 Ω feedback resistor for an optimized bandwidth with a gain of 12B for a 12V power supply. Nevertheless, due to production test constraints, the TS616 is tested with the same feedback resistor for 12V and 5V power supplies (910 Ω). Symbol Parameter Test Condition Min. Typ. Max. Unit |
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