WARP11 datasheet(4/19 Pages) STMICROELECTRONICS

4 / 19 page

Functions in dedicated memories in order to reduce

the computational time. Therefore a great amount

of W.A.R.P. processing is based on a look-up table

approach rather than on on-line calculation.

Those Membership Functions (MFs), each one

portrayed by a configurable resolution of 26 or 27

elements, are stored in four internal RAMs (1Kbyte

each). The consequent MFs, due to the different

modelling, are loaded in a single RAM by storing

for each MF its area and its barycentre. This is due

to the adoption of the Center of Gravity defuzzifica-

tion method.

The downloading phase allows the setting of the

device, in terms of I/O number, universes of dis-

course and MF shapes. During this phase W.A.R.P.

prepares its internal memories for the on-line

elaboration phase and loads the microcode in its

program memory. This microcode, which drives the

on-line phase, is generated by the Compiler (see

W.A.R.P.-SDT User Manual) according to the

adopted configuration. The possible configurations

are shown in table 1.

During the on-line phase (up to 40MHz working

frequency), W.A.R.P. processes the input data and

produces its outputs according to the configuration

loaded in the downloading phase.

W.A.R.P. is conceived to work together with tradi-

Name

Pins Type

Function

VDD

Power Supply

VSS

Ground

A0-A9

I/O

Memory Address Bus

I0-I7

Data Input Bus

PRST

Preset

FIN

First Input Signal

OFL

Off-Line/On-Line Switch

CHM

Charge Mode Switch

Testing (it must be connected to VSS)

MTE

Testing (it must be connected to VSS)

MCLK

Clock (up to 40 MHz)

EPA0-EPA2

EPROM Address Bus

O0-O9

Defuzzified Output

OCNT0-OCNT3

Output Counter

STB

Strobe (Output Ready Signal)

End Process

New Process

OTST

Testing (it must be connected to VSS)

OMTS

Testing (it must be connected to VSS)

SYNC

External Synchronization

Table 4. Pin Description

tional microcontrollers which shall perform normal

control tasks while W.A.R.P. will be indipendently

responsible for all the fuzzy related computing.

W.A.R.P. is manufactured using the high perform-

ance, reliable HCMOS4T (O.7

µm) SGS-THOM-

SON Microelectronics process.

PIN DESCRIPTION

VDD,VSS: Power is supplied to W.A.R.P. using

these pins. VDD is the power connection and VSS is

the ground connection; multi-connections are nec-

essary.

A0-A9: When the CHM pin is low they accept as

input the addresses for the internal memory bus. In

the off-line mode they are used to address W.A.R.P.

memories where the microprogram and data of

antecedent and consequentmembership functions

must be loaded.

Each A0-A9 word is composed by assembling the

data contained in the memory support related to .cs

and .add files (see W.A.R.P.-SDT User Manual). In

particular, couples of data respectively coming from

.cs and .add files are joined to form a single A0-A9

word in the following way:

* Pins not used in W.A.R.P. 1.0

4/19

W.A.R.P.1.1

WARP11 데이터시트(PDF) 4 Page - STMicroelectronics

WARP11 데이터시트(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

데이터시트 다운로드

링크 URL