| 전자부품 데이터시트 검색엔진 |
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AT52SC1283J 데이터시트(PDF) 1 Page - ATMEL Corporation |
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AT52SC1283J 데이터시트(HTML) 1 Page - ATMEL Corporation |
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1 / 52 page ![]() Module Features • 128-Mbit Burst/Page Flash + 32-Mbit/64-Mbit PSRAM • Single 88-ball (8 mm x 10 mm x 1.2 mm) CBGA Package • 1.7V to 1.95V V CC • 1.8V to 1.95V for V CCQ and PVCC 128-Mbit Flash Features • 8M x 16 Organization • High Performance – Random Access Time – 70 ns, 85 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz – Configurable Burst Operation • Sector Erase Architecture – Sixteen 4K Word Sectors with Individual Write Lockout – Two Hundred Fifty-four 32K Word Main Sectors with Individual Write Lockout • Typical Sector Erase Time: 32K Word Sectors – 800 ms; 4K Word Sectors – 200 ms • Thirty-two Plane Organization, Permitting Concurrent Read in Any of the Thirty-one Planes not Being Programmed/Erased • Suspend/Resume Feature for Erase and Program – Supports Reading and Programming Data from Any Sector by Suspending Erase of a Different Sector – Supports Reading Any Word by Suspending Programming of Any Other Word • Low-power Operation –30 mA Active – 20 µA Standby • VPP Pin for Write Protection and Accelerated Program Operations • RESET Input for Device Initialization • Two Protection Registers (128 Bits + 2,048 Bits) • Common Flash Interface (CFI) • Top and Bottom Boot Sectors • 1.7V to 1.95V Operating Voltage Asynchronous/Page PSRAM Features • 32-Mbit (2M Word x 16)/64-Mbit (4M Word x 16) • 70 ns Random Access Time • 30 ns Page Read Cycle Time • 1.8V to 1.95V Operating Voltage • <10 µA Deep Standby Power Stack Module Memory Contents Device Memory Combination AT52SC1283J 128M Flash + 32M PSRAM AT52SC1284J 128M Flash + 64M PSRAM 128-Mbit Flash + 32-Mbit/64-Mbit PSRAM Stack Memory AT52SC1283J AT52SC1284J Preliminary 3530B–STKD–2/4/05 |
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