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B772 데이터시트(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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B772 데이터시트(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page ![]() -Jun-2004 Rev. B Page 1 of 2 01 Elektronische Bauelemente B772 PNP Type TO-126 Features * Low speed switching Plastic Encapsulate Transistors MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol meter Para Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current –Continuous -3 A PC Collector Dissipation 1.25 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 C o C o C o ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100μA ,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -10 mA , IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE= -100 μA,IC=0 -6 V Collector cut-off current ICBO VCB= -40 V , IE=0 -1 μ A Collector cut-off current ICEO VCE=-30 V , IB=0 -10 μ A Emitter cut-off current IEBO VEB=-6V , IC=0 -1 μ A hFE(1) VCE= -2V, IC= -1A 60 400 DC current gain Collector-emitter saturation voltage VCE(sat) IC=-2A, IB= -0.2A -0.5 V Base-emitter saturation voltage VBE(sat) IC=-2A, IB= -0.2A -1.5 V Transition frequency f T VCE= -5V, IC=-0.1A f = 10MHz 80 MHz CLASSIFICATION OF hFE(1) Rank R O Y GR Range 60-120 100-200 160-320 200-400 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free 0.76±0.1 Dimensions in Millimeters 7.6±0.2 1: Emitter 2: Collector 3: Base 4.0±0.1 10.8±0.2 2.2±0.1 15.5±0.2 1.27±0.1 2.29 Typ. 4.58±0.1 0.5±0.1 1.3±0.2 2.7±0.2 3.1± 0.1 O 1 2 3 |
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