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B772 데이터시트(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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B772 데이터시트(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 2 page ![]() Elektronische Bauelemente Page 2of 2 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual B772 PNP Type Plastic Encapsulate Transistors Typical Characteristics Figure 1. Static Characteristic Figure 2. DC current Gain Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance Figure 5. Current Gain Bandwidth Product Figure 6. Safe Operating Area 0 -4 -8 -12 -16 -20 -0.4 -0.8 -1.2 -1.6 -2.0 I B = -2mA I B = -10mA I B = -5mA I B = -3mA I B = -8mA I B = -9mA I B = -6mA I B = -1mA I B = -7mA I B = -4mA V CE[V], COLLECTOR-EMITTER VOLTAGE -1 -10 -100 -1000 -10000 1 10 100 1000 VCE = -2V IC[mA], COLLECTOR CURRENT -1 -10 -100 -1000 -10000 -1 -10 -100 -1000 -10000 VCE(sat) VBE(sat) IC = 10· IB IC[mA], COLLECTOR CURRENT -1 -10 -100 1 10 100 1000 I E = 0 f=1MHz V CB[V], COLLECTOR-BASE VOLTAGE -0.01 -0.1 -1 1 10 100 1000 VCE=5V IC[A], COLLECTOR CURRENT -1 -10 -100 -0.01 -0.1 -1 -10 I C MAX(DC) I C MAX(Pulse) 10ms 1m s s/b Li mite d Dissipa tion Limite d V CE[V], COLLECTOR-EMITTER VOLTAGE -Jun-2004 Rev. B 01 |
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