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SSG4503 데이터시트(PDF) 4 Page - SeCoS Halbleitertechnologie GmbH |
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SSG4503 데이터시트(HTML) 4 Page - SeCoS Halbleitertechnologie GmbH |
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4 / 7 page ![]() 01-Jun-2002 Rev. A Page 4 of 7 Characteristics Curve N-Channel http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Elektronische Bauelemente SSG4503 N Channel 6.9A, 30V,RDS(ON) 28m Enhancement Mode Power Mos.FET P Channel -6.3A, -30V,RDS(ON) 36m Ω Ω |
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