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SSG4503 데이터시트(PDF) 6 Page - SeCoS Halbleitertechnologie GmbH |
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SSG4503 데이터시트(HTML) 6 Page - SeCoS Halbleitertechnologie GmbH |
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6 / 7 page ![]() http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 6 of 7 tage does not sag below the minimum dropout voltage during the load V higher than Vout in order for the device to Description GND Typically a large storage capacitor is connected from this pin to ground to insure that the input 1.3V or open= output enable. NC P-Channel Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature Elektronische Bauelemente SSG4503 N Channel 6.9A, 30V,RDS(ON) 28m Enhancement Mode Power Mos.FET P Channel -6.3A, -30V,RDS(ON) 36m Ω Ω |
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