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KH561AI 데이터시트(PDF) 12 Page - Cadeka Microcircuits LLC. |
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KH561AI 데이터시트(HTML) 12 Page - Cadeka Microcircuits LLC. |
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12 / 13 page ![]() DATA SHEET KH561 12 REV. 1A January 2004 Figure 10: Thermal Model Note that the Pt and Pq equations are written for positive Vo. Absolute values of -VCC, Vo, and Io, should be used for a negative going Vo. since we are only interested in delta V’s. For bipolar swings, the two powers for each output polarity are developed as shown above then ratioed by the duty cycle. Having the total internal power, as well as its component parts, the maximum junction temperature may be computed as follows. Tc = TA + (Pq + PT + Pcircult) • θca Case Temperature θ ca = 35°C/W for the KH561 with no heatsink in still air Tj(t) =Tc + Pt • 20°C/W output transistor junction temperature Tj(q) = Tc + Pq • 200°C/W hottest internal junction temperature The Limiting Factor for Output Power is Maximum Junction Temperature Reducing θ ca through either heatsinking and/or airflow can greatly reduce the junction temperatures. One effective means of heatsinking the KH561 is to use a thermally conductive pad under the part from the pack- age bottom to a top surface ground plane on the compo- nent side. Tests have shown a θ ca of 24°C in still air using a “Sil Pad” available from Bergquist (800-347- 4572). As an example of calculating the maximum internal junc- tion temperatures, consider the circuit of Figure 1 driving ±2.5V, 50% duty cycle, square wave into a 50 Ω load. Note that 1/2 of the total PT and Pa powers were used here since the 50% duty cycle output splits the power evenly between the two halves of the circuit whereas the total powers were used to get case temperature. Even with the output current internally limited to 250mA, the KH561’s short circuiting capability is principally a thermal issue. Generally, the KH561 can survive short duration shorts to ground without any special effort. For protection against shorts to the ±15 volt supply voltages, it is very useful to reduce some of the voltage across the output stage transistors by using some external output resistance, Rx, as shown in Figure 9. Evaluation Board An evaluation board (part number 730019) for the KH561 is available. R50 410 5 51 45.6 I 2.5V / 45.6 54.9mA I 54.9mA 54.9mA .06 68.1mA P 68.1mA 15 2.5 0.7 15.3 68.1mA 733mW total power in both sides of the output stage P 2 68.1mA 15 1.4 17.3 68.1mA 169mW total power in both sides of hottest eq o T 1 2 22 T q = ⋅ − = = () = =+ () + () = =− − − ⋅ [] = =⋅ − − ⋅ [] = Ω Ω Ω Ω Ω Ω 0. junctions junctions prior to output stage P 1.3 15 2 68.1mA 54.9mA 19.2mA 733mW 169mW 1.058W power in the remainder of circuit With these powers and T 25 C and 35 C / W T 25 C .733 .169 1.058 35 94 C case temperature From this, the hottest internal junctions may be found as T t 94 C .733 20 101 circuit Aca c j 1 2 =⋅ ()⋅⋅ − + [] −− = =° = ° =° + + + ()⋅= ° () =° + ()⋅= ° θ C C output stage T q 94 C .169 200 111 C hottest internal junction j 1 2 () =° + ()⋅= ° Ambient Temperature θca 200 °C/W 20 °C/W Tj(t) TA Pt Tj(q) Pq Pcircuit Case Temperature Tc Case to Ambient Termal Impedance I V / R total output current with R R RA A1 total load I I I .06 total internal output stage current P I V 1.4 17.3 I output stage power P .2 I V V 0.7 15.3 I power in hottest internal junction prior oo eq eq L f L L t 1 2 oo 2 2 tt CC t qt CC ot = = − =+ + () =⋅ − − ⋅ () =⋅ ⋅ − − − ⋅ () Ω Ω 0 to to output stage P 1.3 V 2 I I 19.2mA P P power in remainder of circuit [note V | V |] circuit CC to t q CC CC =⋅ ⋅ ⋅ − + () −− =− |
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