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STM32F107RB 데이터시트(PDF) 35 Page - STMicroelectronics |
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STM32F107RB 데이터시트(HTML) 35 Page - STMicroelectronics |
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35 / 95 page ![]() STM32F105xx, STM32F107xx Electrical characteristics Doc ID 15274 Rev 4 35/95 5.3.2 Operating conditions at power-up / power-down Subject to general operating conditions for TA. Table 10. Operating conditions at power-up / power-down 5.3.3 Embedded reset and power control block characteristics The parameters given in Table 11 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 9. Symbol Parameter Conditions Min Max Unit tVDD VDD rise time rate 0 ¢ µs/V VDD fall time rate 20 ¢ Table 11. Embedded reset and power control block characteristics Symbol Parameter Conditions Min Typ Max Unit VPVD Programmable voltage detector level selection PLS[2:0]=000 (rising edge) 2.1 2.18 2.26 V PLS[2:0]=000 (falling edge) 2 2.08 2.16 V PLS[2:0]=001 (rising edge) 2.19 2.28 2.37 V PLS[2:0]=001 (falling edge) 2.09 2.18 2.27 V PLS[2:0]=010 (rising edge) 2.28 2.38 2.48 V PLS[2:0]=010 (falling edge) 2.18 2.28 2.38 V PLS[2:0]=011 (rising edge) 2.38 2.48 2.58 V PLS[2:0]=011 (falling edge) 2.28 2.38 2.48 V PLS[2:0]=100 (rising edge) 2.47 2.58 2.69 V PLS[2:0]=100 (falling edge) 2.37 2.48 2.59 V PLS[2:0]=101 (rising edge) 2.57 2.68 2.79 V PLS[2:0]=101 (falling edge) 2.47 2.58 2.69 V PLS[2:0]=110 (rising edge) 2.66 2.78 2.9 V PLS[2:0]=110 (falling edge) 2.56 2.68 2.8 V PLS[2:0]=111 (rising edge) 2.76 2.88 3 V PLS[2:0]=111 (falling edge) 2.66 2.78 2.9 V VPVDhyst (2) PVD hysteresis 100 mV VPOR/PDR Power on/power down reset threshold Falling edge 1.8(1) 1. The product behavior is guaranteed by design down to the minimum VPOR/PDR value. 1.88 1.96 V Rising edge 1.84 1.92 2.0 V VPDRhyst (2) PDR hysteresis 40 mV TRSTTEMPO (2) 2. Guaranteed by design, not tested in production. Reset temporization 1 2.5 4.5 ms |
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