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STM32F107RC 데이터시트(PDF) 52 Page - STMicroelectronics

부품명 STM32F107RC
상세설명  Connectivity line, ARM-based 32-bit MCU with 64/256 KB Flash, USB OTG, Ethernet, 10 timers, 2 CANs, 2 ADCs, 14 communication interfaces
PDF  95 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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STM32F107RC 데이터시트(HTML) 52 Page - STMicroelectronics

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Electrical characteristics
STM32F105xx, STM32F107xx
52/95
Doc ID 15274 Rev 4
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with SAE
IEC61967-2 standard which specifies the test board and the pin loading.
5.3.11
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
G
A supply overvoltage is applied to each power supply pin
G
A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with EIA/JESD 78A IC latch-up standard.
Table 32.
EMI characteristics
Symbol
Parameter
Conditions
Monitored
frequency band
Max vs. [fHSE/fHCLK]
Unit
8/48 MHz
8/72 MHz
SEMI
Peak level
VDD ?"3.3 V, TA ?"25 °C,
LQFP100 package
compliant with IEC61967-2
0.1 to 30 MHz
9
9
dBµV
30 to 130 MHz
26
13
130 MHz to 1GHz
25
31
SAE EMI Level
4
4
-
Table 33.
ESD absolute maximum ratings
Symbol
Ratings
Conditions
Class Maximum value(1)
Unit
VESD(HBM)
Electrostatic discharge voltage
(human body model)
TA ?"+25 °C conforming to
JESD22-A114
2
2000
V
VESD(CDM)
Electrostatic discharge voltage
(charge device model)
TA ?"+25 °C conforming to
JESD22-C101
II
500
1. Based on characterization results, not tested in production.
Table 34.
Electrical sensitivities
Symbol
Parameter
Conditions
Class
LU
Static latch-up class
TA ?"+105 °C conforming to JESD78A
II level A



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