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STM8L151C4U6 데이터시트(PDF) 73 Page - STMicroelectronics

부품명 STM8L151C4U6
상세설명  8-bit ultralow power MCU, up to 32 KB Flash, 1 KB Data EEPROM RTC, LCD, timers, USART, I2C, SPI, ADC, DAC, comparators
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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STM8L151C4U6 데이터시트(HTML) 73 Page - STMicroelectronics

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STM8L151xx, STM8L152xx
Electrical parameters
Doc ID 15962 Rev 2
73/101
8.3.5
Memory characteristics
TA = -40 to 125 °C unless otherwise specified.
Table 30.
RAM and hardware registers
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRM
Data retention mode (1)
1.
Minimum supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in hardware
registers (only in Halt mode). Guaranteed by characterization, not tested in production.
Flash memory
Halt mode (or Reset)
1.4
V
Table 31.
Flash program memory
Symbol
Parameter
Conditions
Min
Typ
Max
(1)
Unit
VDD
Operating voltage
(all modes, read/write/erase)
fSYSCLK = 16 MHz
1.65
3.6
V
tprog
Programming time for 1 or 128 bytes (block)
erase/write cycles (on programmed byte)
TBD
ms
Programming time for 1 to 128 bytes (block)
write cycles (on erased byte)
TBD
ms
Iprog
Programming/ erasing consumption
TA=+25 °C, VDD = 3.0 V
TBD
mA
TA=+25 °C, VDD = 1.8 V
TBD
tRET
Data retention (program memory) after 10000
erase/write cycles at TA=+85 °C
TRET=+55 °C
TBD(1)
years
Data retention (data memory) after 10000
erase/write cycles at TA=+85 °C
TRET=+55 °C
TBD(1)
Data retention (data memory) after 10000
erase/write cycles at TA=+85 °C
TRET=+85 °C
TBD(1)
NRW
Erase/write cycles (program memory)
See notes (1)(2)
TBD(1)
kcycles
Erase/write cycles (data memory)
See notes (1)(3)
TBD(1)
(4)
1.
Data based on characterization results, not tested in production.
2.
Retention guaranteed after cycling is 10 years @ 55 °C.
3.
Retention guaranteed after cycling is 1 year @ 55 °C.
4.
Data based on characterization performed on the whole data memory.



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