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ATtiny261-15MZ 데이터시트(PDF) 23 Page - ATMEL Corporation |
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ATtiny261-15MZ 데이터시트(HTML) 23 Page - ATMEL Corporation |
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23 / 227 page ![]() 23 7753C–AVR–07/09 ATtiny261/ATtiny461/ATtiny861 6.5.2 EEDR – EEPROM Data Register • Bits 7:0 – EEDR7:0: EEPROM Data For the EEPROM write operation the EEDR Register contains the data to be written to the EEPROM in the address given by the EEAR Register. For the EEPROM read operation, the EEDR contains the data read out from the EEPROM at the address given by EEAR. 6.5.3 EECR – EEPROM Control Register • Bit 7 – Res: Reserved Bit This bit is reserved for future use and will always read as 0 in ATtiny261/461/861. For compati- bility with future AVR devices, always write this bit to zero. After reading, mask out this bit. • Bit 6 – Res: Reserved Bit This bit is reserved in the ATtiny261/461/861 and will always read as zero. • Bits 5, 4 – EEPM1 and EEPM0: EEPROM Programming Mode Bits The EEPROM Programming mode bits setting defines which programming action that will be triggered when writing EEPE. It is possible to program data in one atomic operation (erase the old value and program the new value) or to split the Erase and Write operations in two different operations. The Programming times for the different modes are shown in Table 6-1. While EEPE is set, any write to EEPMn will be ignored. During reset, the EEPMn bits will be reset to 0b00 unless the EEPROM is busy programming. • Bit 3 – EERIE: EEPROM Ready Interrupt Enable Writing EERIE to one enables the EEPROM Ready Interrupt if the I-bit in SREG is set. Writing EERIE to zero disables the interrupt. The EEPROM Ready Interrupt generates a constant inter- rupt when Non-volatile memory is ready for programming. Bit 7 65432 10 0x1D (0x3D) EEDR7 EEDR6 EEDR5 EEDR4 EEDR3 EEDR2 EEDR1 EEDR0 EEDR Read/Write R/W R/W R/W R/W R/W R/W R/W R/W Initial Value 0 00000 00 Bit 7 65432 10 0x1C (0x3C) – – EEPM1 EEPM0 EERIE EEMPE EEPE EERE EECR Read/Write R R R/W R/W R/W R/W R/W R/W Initial Value 0 0 X X 0 0 X 0 Table 6-1. EEPROM Mode Bits EEPM1 EEPM0 Programming Time Operation 0 0 3.4 ms Erase and Write in one operation (Atomic Operation) 0 1 1.8 ms Erase Only 1 0 1.8 ms Write Only 1 1 – Reserved for future use |
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