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ATtiny88 데이터시트(PDF) 189 Page - ATMEL Corporation |
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ATtiny88 데이터시트(HTML) 189 Page - ATMEL Corporation |
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189 / 266 page ![]() 189 8008C–AVR–03/09 ATtiny48/88 When pulsing WR or OE, the command loaded determines the action executed. The different Commands are shown in Table 20-12. 20.7 Parallel Programming 20.7.1 Enter Programming Mode The following algorithm puts the device in Parallel (High-voltage) Programming mode: 1. Set Prog_enable pins listed in Table 20-10 on page 188 to “0000”, RESET pin to 0V and V CC to 0V. 2. Apply 4.5 – 5.5V between V CC and GND. Ensure that V CC reaches at least 1.8V within the next 20 µs. 3. Wait 20 – 60 µs, and apply 11.5 – 12.5V to RESET. 4. Keep the Prog_enable pins unchanged for at least 10µs after the High-voltage has been applied to ensure the Prog_enable Signature has been latched. 5. Wait at least 300 µs before giving any parallel programming commands. 6. Exit Programming mode by power the device down or by bringing RESET pin to 0V. If the rise time of the V CC is unable to fulfill the requirements listed above, the following alterna- tive algorithm can be used. 1. Set Prog_enable pins listed in Table 20-10 on page 188 to “0000”, RESET pin to 0V and V CC to 0V. 2. Apply 4.5 – 5.5V between V CC and GND. 3. Monitor V CC, and as soon as VCC reaches 0.9 – 1.1V, apply 11.5 – 12.5V to RESET. 4. Keep the Prog_enable pins unchanged for at least 10µs after the High-voltage has been applied to ensure the Prog_enable Signature has been latched. 5. Wait until V CC actually reaches 4.5 -5.5V before giving any parallel programming commands. 6. Exit Programming mode by power the device down or by bringing RESET pin to 0V. Table 20-12. Command Byte Bit Coding Command Byte Command Executed 1000 0000 Chip Erase 0100 0000 Write Fuse bits 0010 0000 Write Lock bits 0001 0000 Write Flash 0001 0001 Write EEPROM 0000 1000 Read Signature Bytes and Calibration byte 0000 0100 Read Fuse and Lock bits 0000 0010 Read Flash 0000 0011 Read EEPROM |
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