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BC640 데이터시트(PDF) 2 Page - ON Semiconductor

부품명 BC640
상세설명  High Current Transistors
PDF  4 Pages
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제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BC640 데이터시트(HTML) 2 Page - ON Semiconductor

  BC640 Datasheet HTML 1Page - ON Semiconductor BC640 Datasheet HTML 2Page - ON Semiconductor BC640 Datasheet HTML 3Page - ON Semiconductor BC640 Datasheet HTML 4Page - ON Semiconductor  
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BC640, BC640−16
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
V(BR)CEO
−80
Vdc
Collector − Base Breakdown Voltage
(IC = −100 mAdc, IE = 0)
V(BR)CBO
−80
Vdc
Emitter − Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
V(BR)EBO
−5.0
Vdc
Collector Cutoff Current
(VCB = −30 Vdc, IE = 0)
(VCB = −30 Vdc, IE = 0, TA = 125°C)
ICBO
−100
−10
nAdc
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = −5.0 mAdc, VCE = −2.0 Vdc)
(IC = −150 mAdc, VCE = −2.0 Vdc)
BC640
BC640−16
(IC = −500 mA, VCE = −2.0 V)
hFE
25
40
100
25
160
250
Collector − Emitter Saturation Voltage
(IC = −500 mAdc, IB = −50 mAdc)
VCE(sat)
−0.25
−0.5
−0.5
Vdc
Base − Emitter On Voltage
(IC = −500 mAdc, VCE = −2.0 Vdc)
VBE(on)
−1.0
Vdc
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product
(IC = −50 mAdc, VCE = −2.0 Vdc, f = 100 MHz)
fT
150
MHz
Output Capacitance
(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)
Cob
9.0
pF
Input Capacitance
(VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz)
Cib
110
pF
1. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle 2.0%.
ORDERING INFORMATION
Device
Package
Shipping
BC640G
TO−92
(Pb−Free)
5000 Units / Bulk
BC640ZL1G
TO−92
(Pb−Free)
2000 Units / Ammo Box
BC640−16
TO−92
5000 Units / Bulk
BC640−16G
TO−92
(Pb−Free)
5000 Units / Bulk



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