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STM32F100C4 데이터시트(PDF) 37 Page - STMicroelectronics

부품명 STM32F100C4
상세설명  Low & medium-density value line, advanced ARM-based 32-bit MCU Low & medium-density value line, advanced ARM-based 32-bit MCU
PDF  84 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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STM32F100C4 데이터시트(HTML) 37 Page - STMicroelectronics

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STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB
Electrical characteristics
Doc ID 16455 Rev 2
37/84
5.3.4
Embedded reference voltage
The parameters given in Table 11 are derived from tests performed under the ambient
temperature and VDD supply voltage conditions summarized in Table 8.
5.3.5
Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 11: Current consumption
measurement scheme.
All Run-mode current consumption measurements given in this section are performed with a
reduced code that gives a consumption equivalent to Dhrystone 2.1 code.
Maximum current consumption
The MCU is placed under the following conditions:
All I/O pins are in input mode with a static value at VDD or VSS (no load)
All peripherals are disabled except if it is explicitly mentioned
Prefetch in on (reminder: this bit must be set before clock setting and bus prescaling)
When the peripherals are enabled fPCLK1 = fHCLK, fPCLK2 = fHCLK
The parameters given in Table 12 are derived from tests performed under the ambient
temperature and VDD supply voltage conditions summarized in Table 8.
Table 11.
Embedded internal reference voltage
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VREFINT
Internal reference voltage
–40 °C < TA < +105 °C
1.16
1.20
1.26
V
–40 °C < TA < +85 °C
1.16
1.20
1.24
V
TS_vrefint
(1)
1.
Shortest sampling time can be determined in the application by multiple iterations.
ADC sampling time when
reading the internal
reference voltage
5.1
17.1(2)
2.
Guaranteed by design, not tested in production.
µs
VRERINT
(2)
Internal reference voltage
spread over the temperature
range
VDD = 3 V ±10 mV
10
mV
TCoeff
(2)
Temperature coefficient
100
ppm/°C



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