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PSII30/12 데이터시트(PDF) 4 Page - Powersem GmbH

부품명 PSII30/12
상세설명  IGBT Module
PDF  4 Pages
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제조업체  POWERSEM [Powersem GmbH]
홈페이지  http://www.powersem.com
Logo POWERSEM - Powersem GmbH

PSII30/12 데이터시트(HTML) 4 Page - Powersem GmbH

  PSII30/12 Datasheet HTML 1Page - Powersem GmbH PSII30/12 Datasheet HTML 2Page - Powersem GmbH PSII30/12 Datasheet HTML 3Page - Powersem GmbH PSII30/12 Datasheet HTML 4Page - Powersem GmbH  
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 4 / 4 page
background image
tentative
data
sheet
product
still
under
development
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
Fig. 7 Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching
times versus collector current times
versus collector current
Fig. 9 Typ. turn on energy and switching
Fig. 10 Typ. turn off energy and switching
times versus gate resistor times
versus gate resistor
Fig. 11 Reverse biased safe operating area
Fig. 12
Typ. transient thermal impedance
RBSOA
0
204060
0
5
10
15
0
50
100
150
020
40
60
0
4
8
12
0
200
400
600
0,00001 0,0001 0,001
0,01
0,1
1
10
0,0001
0,001
0,01
0,1
1
10
0
20406080
100
0
2
4
6
8
0
200
400
600
800
0
2040
6080
100
0
1
2
3
4
0
40
80
120
160
single pulse
V
CE = 600 V
V
GE = ±15 V
R
G = 47 Ω
T
VJ = 125°C
0
200
400
600
800 1000 1200 1400
0
20
40
60
V
CE = 600V
V
GE = ±15V
R
G = 47Ω
T
VJ = 125°C
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
I
C
A
I
C
A
E
off
E
on
t
t
R
G
R
G
V
CE
t
s
mJ
E
on
mJ
E
off
ns
t
ns
t
I
CM
K/W
ZthJC
IGBT
diode
V
A
mJ
ns
ns
mJ
42T120
42T120
42T120
42T120
42T120
V
CE = 600 V
V
GE = ±15 V
I
C
= 25 A
T
VJ = 125°C
R
G = 47 Ω
T
VJ = 125°C
V
CE = 600 V
V
GE = ±15 V
I
C
= 25 A
T
VJ = 125°C
MDI...50-12P1



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