tentative

data

sheet

product

still

under

development

IGBT Module

I

C80

=

33 A

V

CES

=

1200 V

V

3.1 V

POWERSEM GmbH, Walpersdorfer Str. 53

D - 91126 Schwabach

Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

Preliminary Data Sheet

Caution: These Devices are sensitive

to electrostatic discharge. Users should

observe proper ESD handling precautions.

PSII 30/12*

*NTC optional

Short Circuit SOA Capability

Square RBSOA

IGBTs

Symbol

Conditions

Maximum Ratings

V

CES

T

1200

V

V

GES

± 20

V

I

C25

T

49

A

I

C80

T

33

A

I

CM

V

50

A

V

CEK

RBSOA, Clamped inductive load; L = 100 µH

V

CES

t

SC

V

10

µs

(SCSOA)

non-repetitive

P

tot

T

208

W

Symbol

Conditions

Characteristic Values

(T

min.

typ.

max.

V

CE(sat)

I

25°C

3.1

3.7

V

T

3.5

V

V

GE(th)

I

4.5

6.5

V

I

CES

V

T

25°C

1.1 mA

T

4.2 mA

I

GES

V

± 20 V

180

nA

t

d(on)

100

ns

t

r

70

ns

t

d(off)

500

ns

t

f

70

ns

E

on

4.6

mJ

E

off

3.4

mJ

C

ies

V

1.65

nF

R

thJC

(per IGBT)

0.6 K/W

R

thJH

with heatsink compound (0.42 K/m.K; 50 µm)

1.2

K/W

Inductive load, T

V

V

Features

•

Package with DCB ceramic

base plate

•

Isolation voltage 3000 V

∼

•

Planar glass passivated chips

•

Low forward voltage drop

•

Leads suitable for PC board

soldering

•

UL Release applied

Applications

•

AC and DC motor control

•

AC servo and robot drives

•

Power supplies

•

Welding inverters

Advantages

•

Easy to mount with four screws

•

Space and weight savings

•

Improved temperature and

power cycling capability

•

High power density

•

Small and light weight

V3

V6

N1

G1

Q1

V10

V9

N15

K1

V13

V12

G15

V1

U1

A1

S15

D1

A9

A7

A15

R15

typical picture, for pin

configuration see outline

drawing