APTGF200DA120D3G datasheet(1/5 Pages) MICROSEMI

부품명	APTGF200DA120D3G

상세설명	Boost chopper NPT IGBT Power Module

PDF	5 Pages

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제조업체	MICROSEMI [Microsemi Corporation]

홈페이지	http://www.microsemi.com

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APTGF200DA120D3G

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Absolute maximum ratings

Symbol

Parameter

Max ratings

Unit

VCES

Collector - Emitter Breakdown Voltage

1200

V

TC = 25°C

300

IC

Continuous Collector Current

TC = 80°C

200

ICM

Pulsed Collector Current

TC = 25°C

400

A

VGE

Gate – Emitter Voltage

±20

V

PD

Maximum Power Dissipation

TC = 25°C

1400

W

RBSOA Reverse Bias Safe Operating Area

Tj = 125°C

400A@1150V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

1

2

3

Q2

6

7

VCES = 1200V

IC = 200A @ Tc = 80°C

Application

•

AC and DC motor control

•

Switched Mode Power Supplies

•

Power Factor Correction

Features

•

Non Punch Through (NPT) FAST IGBT

- Low voltage drop

- Low tail current

- Switching frequency up to 50 kHz

- Soft recovery parallel diodes

- Low diode VF

- Low leakage current

- RBSOA and SCSOA rated

•

Kelvin emitter for easy drive

•

High level of integration

•

M6 power connectors

Benefits

•

Stable temperature behavior

•

Very rugged

•

Direct mounting to heatsink (isolated package)

•

Low junction to case thermal resistance

•

Easy paralleling due to positive TC of VCEsat

•

RoHS Compliant

Boost chopper

NPT IGBT Power Module

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APTGF200DA120D3G 데이터시트(PDF) 1 Page - Microsemi Corporation

APTGF200DA120D3G 데이터시트(HTML) 1 Page - Microsemi Corporation

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