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APTGF200DA120D3G 데이터시트(PDF) 2 Page - Microsemi Corporation

부품명 APTGF200DA120D3G
상세설명  Boost chopper NPT IGBT Power Module
PDF  5 Pages
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제조업체  MICROSEMI [Microsemi Corporation]
홈페이지  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTGF200DA120D3G 데이터시트(HTML) 2 Page - Microsemi Corporation

  APTGF200DA120D3G Datasheet HTML 1Page - Microsemi Corporation APTGF200DA120D3G Datasheet HTML 2Page - Microsemi Corporation APTGF200DA120D3G Datasheet HTML 3Page - Microsemi Corporation APTGF200DA120D3G Datasheet HTML 4Page - Microsemi Corporation APTGF200DA120D3G Datasheet HTML 5Page - Microsemi Corporation  
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APTGF200DA120D3G
www.microsemi.com
2- 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1200V
5
mA
Tj = 25°C
3.2
3.7
VCE(on)
Collector Emitter on Voltage
VGE = 15V
IC = 200A
Tj = 125°C
3.9
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 8 mA
5.2
5.8
6.4
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
13
Cres
Reverse Transfer Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
1
nF
QG
Gate charge
VGE=±15V, IC=200A
VCE=600V
2.1
µC
Td(on)
Turn-on Delay Time
100
Tr
Rise Time
60
Td(off)
Turn-off Delay Time
530
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 200A
RG = 4.7Ω
30
ns
Td(on)
Turn-on Delay Time
110
Tr
Rise Time
70
Td(off)
Turn-off Delay Time
550
Tf
Fall Time
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 200A
RG = 4.7Ω
40
ns
Eon
Turn On Energy
Tj = 125°C
19
Eoff
Turn Off Energy
VGE = ±15V
VBus = 600V
IC = 200A
RG = 4.7Ω
Tj = 125°C
15
mJ
Isc
Short Circuit data
VGE ≤15V ; VBus = 900V
tp ≤ 10µs ; Tj = 125°C
1300
A
Reverse diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
750
IRRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 125°C
1000
µA
IF
DC Forward Current
Tc = 80°C
200
A
Tj = 25°C
2.1
VF
Diode Forward Voltage
IF = 200A
Tj = 125°C
1.9
V
Tj = 25°C
100
trr
Reverse Recovery Time
Tj = 125°C
200
ns
Tj = 25°C
14
Qrr
Reverse Recovery Charge
Tj = 125°C
40
µC
Tj = 25°C
5.2
Err
Reverse Recovery Energy
IF = 200A
VR = 600V
di/dt =3000A/µs
Tj = 125°C
11.2
mJ



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