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APTM120U10SCAVG 데이터시트(PDF) 6 Page - Microsemi Corporation

부품명 APTM120U10SCAVG
상세설명  Single switch Series & SiC parallel diodes MOSFET Power Module
PDF  8 Pages
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제조업체  MICROSEMI [Microsemi Corporation]
홈페이지  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM120U10SCAVG 데이터시트(HTML) 6 Page - Microsemi Corporation

  APTM120U10SCAVG Datasheet HTML 1Page - Microsemi Corporation APTM120U10SCAVG Datasheet HTML 2Page - Microsemi Corporation APTM120U10SCAVG Datasheet HTML 3Page - Microsemi Corporation APTM120U10SCAVG Datasheet HTML 4Page - Microsemi Corporation APTM120U10SCAVG Datasheet HTML 5Page - Microsemi Corporation APTM120U10SCAVG Datasheet HTML 6Page - Microsemi Corporation APTM120U10SCAVG Datasheet HTML 7Page - Microsemi Corporation APTM120U10SCAVG Datasheet HTML 8Page - Microsemi Corporation  
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APTM120U10SCAVG
www.microsemi.com
6 – 8
0.85
0.90
0.95
1.00
1.05
1.10
1.15
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
Breakdown Voltage vs Temperature
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
VGS=10V
ID=58A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
TC, Case Temperature (°C)
Maximum Safe Operating Area
10ms
1ms
100µs
1
10
100
1000
1
10
100
1000
VDS, Drain to Source Voltage (V)
limited by RDSon
Single pulse
TJ=150°C
TC=25°C
1200
Ciss
Crss
Coss
100
1000
10000
100000
0
1020
3040
50
VDS, Drain to Source Voltage (V)
Capacitance vs Drain to Source Voltage
VDS=240V
VDS=600V
VDS=960V
0
2
4
6
8
10
12
14
0
300
600
900
1200
1500
Gate Charge (nC)
Gate Charge vs Gate to Source Voltage
ID=116A
TJ=25°C



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