| 전자부품 데이터시트 검색엔진 |
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APTM120U10SCAVG 데이터시트(PDF) 7 Page - Microsemi Corporation |
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APTM120U10SCAVG 데이터시트(HTML) 7 Page - Microsemi Corporation |
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7 / 8 page ![]() APTM120U10SCAVG www.microsemi.com 7 – 8 Delay Times vs Current td(on) td(off) 0 50 100 150 200 250 300 30 60 90 120 150 180 ID, Drain Current (A) VDS=800V RG=1.2Ω TJ=125°C L=100µH Rise and Fall times vs Current tr tf 0 20 40 60 80 100 30 60 90 120 150 180 ID, Drain Current (A) VDS=800V RG=1.2Ω TJ=125°C L=100µH Switching Energy vs Current Eon Eoff 0 3 6 9 12 30 60 90 120 150 180 ID, Drain Current (A) VDS=800V RG=1.2Ω TJ=125°C L=100µH Eon Eoff 4 8 12 16 20 24 02 4 6 8 Gate Resistance (Ohms) Switching Energy vs Gate Resistance VDS=800V ID=116A TJ=125°C L=100µH Hard switching ZCS ZVS 0 25 50 75 100 125 150 175 50 70 90 110 ID, Drain Current (A) Operating Frequency vs Drain Current VDS=800V D=50% RG=1.2Ω TJ=125°C TC=75°C TJ=25°C TJ=150°C 1 10 100 1000 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) Source to Drain Diode Forward Voltage |
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