HFP640 datasheet(4/8 Pages) SEMIHOW

4 / 8 page

◎ SEMIHOW REV.A0,July 2005

Typical Characteristics (continued)

PDM

-5

-4

-3

-2

-1

-2

-1

N o te s :

※

1 . Z

θ JC(t ) = 0 . 9

/W M a x .

℃

2 . D u ty F a c to r , D = t

1 /t 2

3 . T

JM - T C = P DM * Z θ JC(t )

s ing le puls e

D= 0 .5

0.02

0.2

0.05

0.1

0.0 1

1 , S q u a r e W a v e P u l s e D u r a t i o n [s e c ]

100

125

150

C, Case Temperature [

]

℃

-2

-1

100 ms

10 ms

1 ms

100 μs

Operation in This Area

is Limited by R

DS(on)

* Notes :

1. T

C = 25

2. T

J = 150

3. Single Pulse

DS, Drain-Source Voltage [V]

Figure 7. Breakdown Voltage Variation

vs Temperature

Figure 8. On-Resistance Variation

vs Temperature

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs Case Temperature

Figure 11. Transient Thermal Response Curve

-100

-50

100

150

200

0.8

0.9

1.0

1.1

1.2

* Note :

1. V

GS = 0 V

2. I

D = 250 μA

J, Junction Temperature [

oC]

-100

-50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

∗ Note :

1. V

GS = 10 V

2. I

D = 1.0 A

J, Junction Temperature [

oC]

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