HFP640 datasheet(3/8 Pages) SEMIHOW

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◎ SEMIHOW REV.A0,July 2005

Typical Characteristics

-1

500

1000

1500

2000

2500

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

Note ;

※

1. V

GS = 0 V

2. f = 1 MHz

rss

oss

iss

DS, Drain-Source Voltage [V]

DS = 100V

DS = 40V

DS = 160V

* Note : I

D = 18.0 A

G, Total Gate Charge [nC]

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

VDS, Drain-Source Voltage [V]

VGS

Top:

15.0V

10.0V

8.0V

7.0V

6.5V

6.0V

5.5V

Bottom:

5.0V

※

Notes

1. 250us Pulse Test

2. Tc=25℃

VGS, Gate-Source Voltage [V]

※

Notes

1. VDS=40V

2. 250us Pulse Test

ID, Drain Current [A]

※

Notes : TJ=25℃

VSD, Source-Drain Voltage [V]

※

Notes

1. VGS=0V

2. 250us Pulse Test

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