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SSM95T07GP 데이터시트(PDF) 4 Page - Silicon Standard Corp. |
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SSM95T07GP 데이터시트(HTML) 4 Page - Silicon Standard Corp. |
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4 / 6 page ![]() 07/11/2007 Rev.1.00 www.SiliconStandard.com 4 SSM95T07GP Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 0 2 4 6 8 10 12 14 0 20 40 60 80 100 120 Q G , Total Gate Charge (nC) V DS =40 V V DS =48 V V DS =64 V I D =80 A td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge 100 1000 10000 1 5 9 1317 2125 29 V DS ,Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 1 10 100 1000 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) T c =25 o C Single Pulse 100us 1ms 10ms 100ms DC |
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