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SSM95T07GP 데이터시트(PDF) 1 Page - Silicon Standard Corp. |
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SSM95T07GP 데이터시트(HTML) 1 Page - Silicon Standard Corp. |
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1 / 6 page ![]() N-CHANNEL ENHANCEMENT MODE POWER MOSFET 07/11/2007 Rev.1.00 www.SiliconStandard.com 1 SSM95T07GP PRODUCT SUMMARY Simple Drive Requirement Lower On-resistance Fast Switching Characteristic RoHS Compliant DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial- industrial power applications and suited for low voltage applications such as DC/DC converters. ABSOLUTE MAXIMUM RATINGS G D S G D S TO-220(P) BVDSS 75V RDS(ON) 5mΩ ID 80A Symbol Units VDS V VGS V ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ EAS mJ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Thermal Resistance Junction-case Max. 0.5 ℃ /W Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃ /W THERMAL DATA Parameter Storage Temperature Range Total Power Dissipation 300 -55 to 175 Operating Junction Temperature Range -55 to 175 Linear Derating Factor 2 Single Pulse Avalanche Energy4 Continuous Drain Current, VGS @ 10V 70 Pulsed Drain Current1 320 Gate-Source Voltage ±20 Continuous Drain Current, VGS @ 10V3 80 Parameter Rating Drain-Source Voltage 75 450 |
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