Notes:

1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.

2.Pulse width <300us, duty cycle <2%.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Drain-source breakdown voltage

60

-

-

V

Breakdown voltage temperature coefficient

-

0.06

-

V/°C

Static drain-source on-resistance

-

-

18

m

Ω

Gate threshold voltage

1

-

3

V

Forward transconductance

-

40

-

S

Drain-source leakage current

V

-

-

10

uA

-

-

25

uA

Gate-source leakage current

-

-

±100

nA

Total gate charge

2

-

35

56

nC

Gate-source charge

-

9.5

-

nC

Gate-drain ("Miller") charge

-

20

-

nC

Turn-on delay time

2

-

12

-

ns

Rise time

-

37

-

ns

Turn-off delay time

-

47

-

ns

Fall time

-

59

-

ns

Input capacitance

-

3160 5060

pF

Output capacitance

-

280

-

pF

Reverse transfer capacitance

f=1.0MHz

-

230

-

pF

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

-

-

1.2

V

Reverse recovery time

-

36

-

ns

Reverse recovery charge

dI/dt=100A/µs

-

45

-

nC

www.SiliconStandard.com

2 of 5

SSM9972GI

9/20/2006 Rev.3.1

-

-

22

m

Ω

Gate resistance

f=1.0MHz

-

1.6

2.4

Ω