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N-channel Enhancement-mode Power MOSFET

60V

18m

Ω

35A

The SSM9972GI achieves fast switching performance

with low gate charge without a complex drive circuit. It

is suitable for low voltage applications such as DC/DC

Pb-free; RoHS-compliant TO-220CFM

PRODUCT SUMMARY

DESCRIPTION

Notes:

1. Pulse width must be limited to avoid exceeding the safe operating area.

2. Pulse width <300us, duty cycle <2%.

converters and general switching circuits.

The SSM9972GI is in TO-220CFM for through-hole

mounting where a small footprint is required on the board,

G

D

S

TO-220CFM (suffix I)

and/or an external heatsink is to be attached.

These devices are manufactured with an advanced process,

providing improved on-resistance and switching performance.

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Units

W/°C

Symbol

Parameter

Value

Units

Maximum thermal resistance, junction-case

4

°C/W

Maximum thermal resistance, junction-ambient

62

°C/W

Drain-source voltage

60

V

Gate-source voltage

±25

V

35

A

22

A

Pulsed drain current

1

120

A

31

W

-55 to 150

°C

Operating junction temperature range

-55 to 150

°C

Linear derating factor

0.25

THERMAL CHARACTERISTICS

Storage temperature range

SSM9972GI

9/20/2006 Rev.3.1