BAW101S datasheet(3/9 Pages) NXP

3 / 9 page

2003 May 13

NXP Semiconductors

Product data sheet

High voltage double diode

BAW101S

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

Device mounted on an FR4 printed-circuit board, cathode-lead mounting pad = 1 cm2.

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

Note

Pulse test: pulse width = 300

µs; δ = 0.02.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per diode

continuous reverse voltage

−

300

series connection

−

600

VRRM

repetitive peak reverse voltage

−

300

series connection

−

600

continuous forward current

single diode loaded; note 1; see Fig.2

−

250

double diode loaded; note 1; see Fig.2

−

140

IFRM

repetitive peak forward current

−

625

IFSM

non-repetitive peak forward

current

square wave; Tj = 25 °C prior to surge;

t = 1

µs

−

4.5

Ptot

total power dissipation

Tamb = 25 °C; note 1

−

350

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

Tamb

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per diode

VBR(R)

reverse breakdown voltage

IR = 100 µA

300

−

forward voltage

IF = 100 mA; note 1

−

1.1

reverse current

VR = 250 V

−

150

VR = 250 V; Tamb = 150 °C

−

µA

trr

reverse recovery time

when switched from IF = 30 mA to IR = 30 mA;

RL = 100 Ω; measured at IR = 3 mA

−

diode capacitance

VR = 0 V; f = 1 MHz

−

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