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BAW101S 데이터시트(PDF) 5 Page - NXP Semiconductors |
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BAW101S 데이터시트(HTML) 5 Page - NXP Semiconductors |
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5 / 9 page ![]() 2003 May 13 5 NXP Semiconductors Product data sheet High voltage double diode BAW101S handbook, full pagewidth MBG703 10 tp (µs) 1 IFSM (A) 102 10−1 104 102 103 10 1 Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. Based on square wave currents. Tj = 25 °C prior to surge. handbook, halfpage 200 100 50 0 150 102 10 1 10−1 10−2 MLE058 (1) (2) Tj (°C) IR ( µA) Fig.5 Reverse current as a function of junction temperature. (1) VR = VRMAX: maximum values. (2) VR = VRMAX: typical values. handbook, halfpage 02 10 0.6 0.5 0.3 0.2 0.4 4 VR (V) Cd (pF) 68 MLE059 Fig.6 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj = 25 °C. |
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