IP4365CX11_1

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© NXP B.V. 2010. All rights reserved.

Product data sheet

Rev. 01 — 26 March 2010

3 of 12

NXP Semiconductors

IP4365CX11

Integrated SIM card passive filter array and USB ESD protection

4.

Functional diagram

5.

Limiting values

[1]

Device is qualified with 1000 pulses of

±15 kV contact discharges each, according to the IEC61000-4-2

model and far exceeds the specified level 4 (8 kV contact discharge).

Fig 2.

Schematic diagram

008aaa216

100

Ω

R1

47

Ω

R2

100

Ω

R3

A1

B1

C1

IEC61000-4-2

level 1

protection pins

IEC61000-4-2

level 4

protection pins

A3

B3

C3

A2, C2

D1

D2

D3

Table 3.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

input voltage

−0.5

+5.5

V

electrostatic discharge

voltage

pins A3, B3, C3, D1, D2 and D3

to ground (A2, C2)

contact discharge

[1]

−15

+15

kV

air discharge

[1]

−15

+15

kV

IEC 61000-4-2 level 4; pins A3,

B3, C3, D1, D2 and D3 to

ground (A2, C2)

contact discharge

−8

+8

kV

air discharge

−15

+15

kV

IEC 61000-4-2 level 1; pins A1,

B1 and C1 to ground (A2, C2)

contact discharge

−2

+2

kV

air discharge

−2

+2

kV

-

60

mW

total power dissipation

-

180

mW

storage temperature

−55

+150

°C

10 s maximum

-

260

°C

ambient temperature

−35

+85

°C